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Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
Published Web Location
http://onlinelibrary.wiley.com/doi/10.1002/adma.201505435/abstract;jsessionid=89FE7CEB2E28BFCA0582D4D92A795550.f02t02No data is associated with this publication.
Abstract
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.